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this is information on a product in full production. october 2013 docid025377 rev 1 1/14 STF7N80K5, stfi7n80k5 n-channel 800 v, 0.95 typ., 6 a zener-protected supermesh? 5 power mosfets in to-220fp and i 2 pakfp packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best fom (figure of merit) ? ultra low gate charge ? 100% avalanche tested ? zener-protected applications ? switching applications description these n-channel zener-protected power mosfets are designed using st?s revolutionary avalanche-rugged very high voltage supermesh? 5 technology, based on an innovative proprietary vertical structure. the result is a dramatic reduction in on-resistance, and ultra-low gate charge for applications which require superior power density and high efficiency. 1 2 3 1 2 3 to-220fp i pakfp 2 d(2) g(1) s(3) am01476v1 order codes v ds r ds(on) max i d p tot STF7N80K5 800 v 1.2 6 a 25 w stfi7n80k5 table 1. device summary order codes marking package packaging STF7N80K5 7n80k5 to-220fp tube stfi7n80k5 i 2 pakfp www.st.com
contents STF7N80K5, stfi7n80k5 2/14 docid025377 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid025377 rev 1 3/14 STF7N80K5, stfi7n80k5 electrical ratings 14 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 6 (1) 1. limited by package a i d drain current (continuous) at t c = 100 c 3.8 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 24 (1) a p tot total dissipation at t c = 25 c 25 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 2a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 88 mj v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s; t c =25 c) 2500 v dv/dt (3) 3. i sd 6 a, di/dt 100 a/s, v ds(peak) v (br)dss peak diode recovery voltage slope 4.5 v/ns t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 5 c/w r thj-amb thermal resistance junction-amb max 62.5 c/w
electrical characteristics STF7N80K5, stfi7n80k5 4/14 docid025377 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 800 v i dss zero gate voltage drain current (v gs = 0) v ds = 800 v v ds = 800 v, tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 3 a 0.95 1.2 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 -360- pf c oss output capacitance - 30 - pf c rss reverse transfer capacitance -1-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 640 v -47-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -20-pf r g intrinsic gate resistance f = 1 mhz, i d =0 - 6 - q g total gate charge v dd = 640 v, i d = 6 a v gs =10 v (see figure 15 ) - 13.4 - nc q gs gate-source charge - 3.7 - nc q gd gate-drain charge - 7.5 - nc
docid025377 rev 1 5/14 STF7N80K5, stfi7n80k5 electrical characteristics 14 the built-in back-to-back zener diodes have been specifically designed to enhance not only the device's esd capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. in this respect, the zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. the integrated zener diodes thus eliminate the need for external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 400 v, i d = 3 a, r g =4.7 , v gs =10 v (see figure 17 ) -11.3- ns t r rise time 8.3 ns t d(off) turn-off delay time 23.7 ns t f fall time 20.2 ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 6 a i sdm source-drain current (pulsed) - 24 a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 6 a, v gs =0 - 1.5 v t rr reverse recovery time i sd = 6 a, v dd = 60 v di/dt = 100 a/s, (see figure 16 ) - 315 ns q rr reverse recovery charge - 2.8 c i rrm reverse recovery current - 17.5 a t rr reverse recovery time i sd = 6 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 16 ) - 480 ns q rr reverse recovery charge - 3.8 c i rrm reverse recovery current - 16 a table 8. gate-source zener diode symbol parameter test conditions min typ. max unit v (br)gso gate-source breakdown voltage i gs = 1ma, i d =0 30 - - v
electrical characteristics STF7N80K5, stfi7n80k5 6/14 docid025377 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ms 4j?# 4c?# 3inlge pulse ?s ms !-v ) $ 6 $3 6 ! 6 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $3 6 $3 6 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v
docid025377 rev 1 7/14 STF7N80K5, stfi7n80k5 electrical characteristics 14 figure 8. capacitance variations figure 9. source-drain diode forward characteristics figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. normalized v (br)dss vs temperature figure 13. maximum avalanche energy vs starting t j # 6 $3 6 p& #iss #oss #rss !-v 6 3$ ) 3$ ! 6 4 * ?# 4 * ?# 4 * ?# !-v 6 '3th 4 * ?# norm ) $ ?! !-v 2 $3on 4 * ?# norm ) $ ! 6 '3 6 !-v 6 "2 $33 4 * ?# norm ) $ m! !-v % !3 4 * ?# m* !-v
test circuits STF7N80K5, stfi7n80k5 8/14 docid025377 rev 1 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
docid025377 rev 1 9/14 STF7N80K5, stfi7n80k5 package mechanical data 14 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF7N80K5, stfi7n80k5 10/14 docid025377 rev 1 table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid025377 rev 1 11/14 STF7N80K5, stfi7n80k5 package mechanical data 14 figure 20. to-220fp drawing 7012510_rev_k_b
package mechanical data STF7N80K5, stfi7n80k5 12/14 docid025377 rev 1 figure 21. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
docid025377 rev 1 13/14 STF7N80K5, stfi7n80k5 revision history 14 5 revision history table 11. document revision history date revision changes 11-oct-2013 1 first release. part numbers previously included in datasheet docid023448
STF7N80K5, stfi7n80k5 14/14 docid025377 rev 1 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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